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Ketai new materials can provide customization of any combination of materials with almost all elements (except radioactive elements) in the "yuansuo periodic table". Some products have not been updated in time. Please consult customer service for special customization needs.

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碳化硅靶材(SiC)

碳化硅靶材(SiC)
  • 碳化硅靶材(SiC)
碳化硅靶材(SiC)essential information
Molecular formulaSiC
purity99.5%
CAS No409-21-2
Molar mass40.097g/mol
density3.22 g/cm3
melting point2830 °C
boiling point常压无沸点,高温下直接升华分解
Solubility (water)不溶于水、酸;可溶于熔融碱、熔融铁

碳化硅靶材(SiC)Product overview

碳化硅靶材属于碳化物陶瓷溅射靶,存在 α-SiC(六方)、β-SiC(立方)多种晶型;采用热压烧结、常压烧结或 HIP 热等静压工艺制备,可加工成圆形、矩形平面靶,可铟焊绑定无氧铜背板。 碳化硅具有高硬度、高热导率、宽禁带、耐高温、耐腐蚀、抗辐照等特性;靶材为半导体陶瓷,电阻率较高,一般采用射频(RF)磁控溅射,不易打火,溅射制备的薄膜硬度高、化学稳定性优异,颗粒少。

碳化硅靶材(SiC)Product application

碳化硅是第三代半导体材料,具有带隙宽、热导率高、电子的饱和飘移速度大、临界击穿电场高和介电常数低、化学稳定性好等特点,在高频、大功率、耐高温、抗辐照的半导体器件和紫外探测器灯方面具有广泛应用场景。

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